Kingston ACR256X64D3S1333C9 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 27

左右 -50% 更低的延时
更快的读取速度，GB/s

20.4 11.9

测试中的平均数值
更快的写入速度，GB/s

17.2 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 18
读取速度，GB/s

11.9 20.4
写入速度，GB/s

8.5 17.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 3814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N

Crucial Technology CB16GU2666.C8ET 16GB

Crucial Technology CB16GU2666.C8ET 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.8FB 16GB

Crucial Technology BL16G32C16S4B.8FB 16GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

DSL Memory D4SS12082SH21A-A 8GB

DSL Memory D4SS12082SH21A-A 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N

Kingston 9905403-170.A00LF 2GB

Kingston 9905403-170.A00LF 2GB

Kingston XW21KG-MIE2 8GB

Kingston XW21KG-MIE2 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology BLS4G4D240FSB.8FADG 4GB

Crucial Technology BLS4G4D240FSB.8FADG 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Patriot Memory (PDP Systems) PSD416G26662 16GB

Patriot Memory (PDP Systems) PSD416G26662 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-4266C19-4GTZ 4GB

G Skill Intl F4-4266C19-4GTZ 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston HP32D4S2S1ME-4 4GB

Kingston HP32D4S2S1ME-4 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB