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Kingston ACR256X64D3S1333C9 2GB
Shenzen Recadata Storage Technology 8GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Shenzen Recadata Storage Technology 8GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Shenzen Recadata Storage Technology 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
需要考虑的原因
Shenzen Recadata Storage Technology 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
27
左右 -23% 更低的延时
更快的读取速度,GB/s
17
11.9
测试中的平均数值
更快的写入速度,GB/s
10.5
8.5
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Shenzen Recadata Storage Technology 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
22
读取速度,GB/s
11.9
17.0
写入速度,GB/s
8.5
10.5
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1620
2820
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Shenzen Recadata Storage Technology 8GB RAM的比较
Corsair CM5S16GM4800A40N2 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston ACR256X64D3S1333C9 2GB
Shenzen Recadata Storage Technology 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3200C16-8GVR 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Samsung M386A8K40BM1-CRC 64GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
Corsair CMY8GX3M2A2133C8 4GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
Crucial Technology CT51264BF160B.M16F 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
AMD R5S38G1601U2S 8GB
Corsair CMR64GX4M8C3200C16 8GB
Kingston 9905471-002.A00LF 2GB
Corsair CMK32GX4M2Z4000C18 16GB
Kingston 99U5471-012.A00LF 4GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Kingston 9905469-153.A00LF 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
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