Kingston ACR256X64D3S1333C9 2GB vs Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 75

左右 64% 更低的延时
更快的写入速度，GB/s

8.5 7.1

测试中的平均数值

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

报告一个错误

更快的读取速度，GB/s

14.9 11.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 75
读取速度，GB/s

11.9 14.9
写入速度，GB/s

8.5 7.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 1763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT25664BA160B.C16F 2GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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SK Hynix HMA81GS6AFR8N-UH 8GB

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Samsung 1600 CL10 Series 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

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Smart Modular SF464128CKHI6DFSEG 4GB

Smart Modular SF464128CKHI6DFSEG 4GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Corsair CMR64GX4M8C3000C15 8GB

Corsair CMR64GX4M8C3000C15 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Crucial Technology CT16G4SFD824A.C16FE 16GB

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Kingston KVR533D2N4 512MB

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V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB