Kingston ACR256X64D3S1333C9 2GB vs SK Hynix HMA81GR7AFR8N-VK 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

SK Hynix HMA81GR7AFR8N-VK 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 49

左右 45% 更低的延时
更快的读取速度，GB/s

11.9 8.8

测试中的平均数值
更快的写入速度，GB/s

8.5 8.4

测试中的平均数值

SK Hynix HMA81GR7AFR8N-VK 8GB

需要考虑的原因
SK Hynix HMA81GR7AFR8N-VK 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

SK Hynix HMA81GR7AFR8N-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 49
读取速度，GB/s

11.9 8.8
写入速度，GB/s

8.5 8.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 2331

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

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Teikon TMA851U6CJR6N-VKSC 4GB

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Corsair CMV4GX3M1B1600C11 4GB

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Corsair CMK8GX4M1A2400C14 8GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

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Corsair CM4X16GC3000C16K4D 16GB

Corsair CM4X16GC3000C16K4D 16GB

Neo Forza NMUD480E86-3200 8GB

Neo Forza NMUD480E86-3200 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston KHYXPX-MID 8GB

Kingston KHYXPX-MID 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB