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Kingston ACR256X64D3S1333C9 2GB
Team Group Inc. DDR4 2666 8GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Team Group Inc. DDR4 2666 8GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Team Group Inc. DDR4 2666 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
28
左右 4% 更低的延时
需要考虑的原因
Team Group Inc. DDR4 2666 8GB
报告一个错误
更快的读取速度,GB/s
13
11.9
测试中的平均数值
更快的写入速度,GB/s
10.4
8.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Team Group Inc. DDR4 2666 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
28
读取速度,GB/s
11.9
13.0
写入速度,GB/s
8.5
10.4
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1620
2757
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Team Group Inc. DDR4 2666 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMSO4GX3M1C1600C11 4GB
Essencore Limited KD4AGU880-36A180X 16GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Golden Empire CL19-19-19 D4-2666 4GB
Kingston KHX1866C11D3/8G 8GB
Transcend Information JM2400HSB-8G 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
OCMEMORY OCM3200CL16D-16GBN 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Apacer Technology 78.C1GQB.4032B 8GB
Kingston K531R8-MIN 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Samsung M378T5663QZ3-CF7 2GB
Corsair CMW16GX4M2K4266C19 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
Corsair CM2X1024-6400C4 1GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M391A1K43BB2-CTD 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-4266C17-16GVKB 16GB
报告一个错误
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Bug description
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