Kingston K531R8-MIN 4GB vs Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

总分

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分

Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

差异规格评论

差异

Kingston K531R8-MIN 4GB

需要考虑的原因
Kingston K531R8-MIN 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 32

左右 13% 更低的延时
更快的读取速度，GB/s

13.4 8.2

测试中的平均数值
更快的写入速度，GB/s

9.0 5.2

测试中的平均数值

Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

需要考虑的原因
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

报告一个错误

更高的内存带宽，mbps

14900 12800

左右 1.16 更高的带宽

规格

完整的技术规格清单

Kingston K531R8-MIN 4GB

Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 32
读取速度，GB/s

13.4 8.2
写入速度，GB/s

9.0 5.2
内存带宽，mbps

12800 14900

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13
时序/时钟速度

9-9-9-24 / 1600 MHz 9-10-9-28 / 1866 MHz
排名PassMark (越多越好)

2445 1409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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