Samsung M471A5244CB0-CWE 4GB vs Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更快的读取速度，GB/s

15.5 8.2

测试中的平均数值
更快的写入速度，GB/s

12.0 5.2

测试中的平均数值
更高的内存带宽，mbps

25600 14900

左右 1.72% 更高的带宽

Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

需要考虑的原因
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 38

左右 -19% 更低的延时

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

主要特点

存储器类型

DDR4 DDR3
PassMark中的延时，ns

38 32
读取速度，GB/s

15.5 8.2
写入速度，GB/s

12.0 5.2
内存带宽，mbps

25600 14900

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 9-10-9-28 / 1866 MHz
排名PassMark (越多越好)

2283 1409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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