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Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB
Compare
Samsung M471A5244CB0-CWE 4GB vs Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Faster reading speed, GB/s
15.5
8.2
Average value in the tests
Faster write speed, GB/s
12.0
5.2
Average value in the tests
Higher memory bandwidth, mbps
25600
14900
Around 1.72% higher bandwidth
Reasons to consider
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
38
Around -19% lower latency
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB
Main characteristics
Memory type
DDR4
DDR3
Latency in PassMark, ns
38
32
Read speed, GB/s
15.5
8.2
Write speed, GB/s
12.0
5.2
Memory bandwidth, mbps
25600
14900
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
9-10-9-28 / 1866 MHz
Ranking PassMark (The more the better)
2283
1409
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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