Kingston ACR26D4S9S1ME-4 4GB vs AMD R744G2133U1S 4GB

总分

Kingston ACR26D4S9S1ME-4 4GB

Kingston ACR26D4S9S1ME-4 4GB

总分

AMD R744G2133U1S 4GB

AMD R744G2133U1S 4GB

差异规格评论

差异

Kingston ACR26D4S9S1ME-4 4GB

需要考虑的原因
Kingston ACR26D4S9S1ME-4 4GB

报告一个错误

更快的读取速度，GB/s

13.9 13.8

测试中的平均数值
更快的写入速度，GB/s

11.0 8.8

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

AMD R744G2133U1S 4GB

需要考虑的原因
AMD R744G2133U1S 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 42

左右 -45% 更低的延时

规格

完整的技术规格清单

Kingston ACR26D4S9S1ME-4 4GB

AMD R744G2133U1S 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

42 29
读取速度，GB/s

13.9 13.8
写入速度，GB/s

11.0 8.8
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2034 2415

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston HX432C15PB3/16 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Ramaxel Technology RMUA5200MR78HAF-3200 8GB

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Crucial Technology CT8G48C40U5.M4A1 8GB

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G Skill Intl F4-2800C14-16GTZ 16GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Ramaxel Technology RMUA5200MR78HAF-3200 8GB

Ramaxel Technology RMUA5200MR78HAF-3200 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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Kingmax Semiconductor GLAG42F-18---------- 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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A-DATA Technology AO1E34RCTV2-BZWS 32GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

Crucial Technology CT8G4DFS8266.M8FE 8GB