Kingston ACR512X64D3S13C9G 4GB vs Crucial Technology BLS4G4D26BFSB.8FE 4GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

Crucial Technology BLS4G4D26BFSB.8FE 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

17.7 11.5

测试中的平均数值
更快的写入速度，GB/s

14.8 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

11.5 17.7
写入速度，GB/s

8.5 14.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1756 3055

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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SK Hynix HMA82GU7MFR8N-TF 16GB

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A-DATA Technology DDR4 2400 16GB

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Samsung M393A8K40B21-CTC 64GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Neo Forza GKE160SO204808-3200 16GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Kingston KHX2400C1C14/16G 16GB

Kingston KHX2400C1C14/16G 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Samsung M393A4K40CB2-CTD 32GB

Samsung M393A4K40CB2-CTD 32GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Apacer Technology 76.D105G.D090B 16GB

Apacer Technology 76.D105G.D090B 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMK32GX4M4B3600C18 8GB

Corsair CMK32GX4M4B3600C18 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Kingston CBD24D4U7S8MA-8 8GB

Kingston CBD24D4U7S8MA-8 8GB