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Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT16G4SFD8213.M16FB 16GB

Kingston ACR512X64D3S13C9G 4GB vs Crucial Technology CT16G4SFD8213.M16FB 16GB

总分
star star star star star
Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分
star star star star star
Crucial Technology CT16G4SFD8213.M16FB 16GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

差异 规格 评论

差异

Kingston ACR512X64D3S13C9G 4GB 需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 4% 更低的延时
Crucial Technology CT16G4SFD8213.M16FB 16GB 需要考虑的原因
Crucial Technology CT16G4SFD8213.M16FB 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.7 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 28
  • 读取速度，GB/s
    11.5 left arrow 13.7
  • 写入速度，GB/s
    8.5 left arrow 10.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1756 left arrow 2505

Kingston ACR512X64D3S13C9G 4GB RAM的比较

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

Crucial Technology CT16G4SFD8213.M16FB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston ACR512X64D3S13C9G 4GB
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Crucial Technology CT16G4SFD8213.M16FB 16GB
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内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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内存RAM
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内存RAM
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Crucial Technology BL8G26C16U4B.8FD 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
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内存RAM
Samsung M378A5244CB0-CTD 4GB
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内存RAM
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Corsair CMSX32GX4M2A2400C16 16GB
内存RAM
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Crucial Technology CT51264BD1339.M16F 4GB
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Corsair CMSX16GX4M1A2666C18 16GB
内存RAM