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Kingston ACR512X64D3S13C9G 4GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Kingston ACR512X64D3S13C9G 4GB vs Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

总分
star star star star star
Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分
star star star star star
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

差异 规格 评论

差异

Kingston ACR512X64D3S13C9G 4GB 需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 41
    左右 34% 更低的延时
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 41
  • 读取速度，GB/s
    11.5 left arrow 15.8
  • 写入速度，GB/s
    8.5 left arrow 13.6
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1756 left arrow 3073

Kingston ACR512X64D3S13C9G 4GB RAM的比较

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Corsair CMK32GX4M4Z2933C16 8GB
Corsair CMK32GX4M4Z2933C16 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CM4X16GE2666C18S2 16GB
Corsair CM4X16GE2666C18S2 16GB
内存RAM
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston MSI21D4S15HAG/8G 8GB
Kingston MSI21D4S15HAG/8G 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMK8GX4M2B3200C16 4GB
Corsair CMK8GX4M2B3200C16 4GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
G Skill Intl F4-4400C19-8GTZKK 8GB
G Skill Intl F4-4400C19-8GTZKK 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Samsung M393A1G43DB0-CPB 8GB
Samsung M393A1G43DB0-CPB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMG16GX4M2D3600C18 8GB
Corsair CMG16GX4M2D3600C18 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Crucial Technology CB8GS2400.C8D 8GB
Crucial Technology CB8GS2400.C8D 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Apacer Technology 78.B1GN3.AZ32B 4GB
Apacer Technology 78.B1GN3.AZ32B 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMW64GX4M8C3200C16 8GB
Corsair CMW64GX4M8C3200C16 8GB
内存RAM