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Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Kingston ACR512X64D3S13C9G 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

总分
star star star star star
Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

差异 规格 评论

差异

Kingston ACR512X64D3S13C9G 4GB 需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 35
    左右 23% 更低的延时
  • 更快的读取速度，GB/s
    11.5 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 7.0
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 35
  • 读取速度，GB/s
    11.5 left arrow 10.0
  • 写入速度，GB/s
    8.5 left arrow 7.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1756 left arrow 2068

Kingston ACR512X64D3S13C9G 4GB RAM的比较

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB RAM的比较

Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
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Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
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Corsair MK16GX44B3000C15 4GB
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Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
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Kingston 8ATF1G64AZ-2G3A141 8GB
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Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
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Micron Technology 9ASF1G72PZ-2G6D1 8GB
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Samsung M471B1G73QH0-YK0 8GB
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Crucial Technology CT4G4DFS8213.M8FA 4GB
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Corsair CMK32GX4M4K4133C19 8GB
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Tanbassh 8G 2666MHZ 8GB
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Kingston 9965525-155.A00LF 8GB
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G Skill Intl F4-3600C16-16GTZR 16GB
内存RAM
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Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
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Kingston 99U5584-005.A00LF 4GB
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A-DATA Technology AO1P32NCSV1-BEWS 16GB
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Kingston KHX1600C9S3L/8G 8GB
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G Skill Intl F4-2933C14-16GFX 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Corsair CMU32GX4M2C3200C16 16GB
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AMD AE34G2139U2 4GB
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Super Talent F24UB16GV 16GB
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