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Kingston ACR512X64D3S13C9G 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB

Kingston ACR512X64D3S13C9G 4GB vs Micron Technology 4ATF51264AZ-2G3E1 4GB

总分
star star star star star
Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分
star star star star star
Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

差异 规格 评论

差异

Kingston ACR512X64D3S13C9G 4GB 需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
Micron Technology 4ATF51264AZ-2G3E1 4GB 需要考虑的原因
Micron Technology 4ATF51264AZ-2G3E1 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 27
  • 读取速度，GB/s
    11.5 left arrow 15.0
  • 写入速度，GB/s
    8.5 left arrow 10.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1756 left arrow 2288

Kingston ACR512X64D3S13C9G 4GB RAM的比较

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

Micron Technology 4ATF51264AZ-2G3E1 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Samsung M393A5143DB0-CPB 4GB
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内存RAM
Samsung M393B5270CH0-CH9 4GB
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Corsair CMU64GX4M4C3200C16 16GB
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内存RAM
Samsung M471B5173QH0-YK0 4GB
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
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Corsair CM4X4GF2400C16N2 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
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内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
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Micron Technology 18ASF1G72PDZ-2G6E1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMD32GX4M2A2666C15 16GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
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Lexar Co Limited LD4AU016G-H3200GST 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
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Corsair CMV8GX4M1L2400C16 8GB
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