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Kingston ACR512X64D3S13C9G 4GB
Mushkin MR[ABC]4U266GHHF8G 8GB

Kingston ACR512X64D3S13C9G 4GB vs Mushkin MR[ABC]4U266GHHF8G 8GB

总分
star star star star star
Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分
star star star star star
Mushkin MR[ABC]4U266GHHF8G 8GB

Mushkin MR[ABC]4U266GHHF8G 8GB

差异 规格 评论

差异

Kingston ACR512X64D3S13C9G 4GB 需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 32
    左右 16% 更低的延时
Mushkin MR[ABC]4U266GHHF8G 8GB 需要考虑的原因
Mushkin MR[ABC]4U266GHHF8G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Mushkin MR[ABC]4U266GHHF8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 32
  • 读取速度，GB/s
    11.5 left arrow 17.0
  • 写入速度，GB/s
    8.5 left arrow 12.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1756 left arrow 2958

Kingston ACR512X64D3S13C9G 4GB RAM的比较

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

Mushkin MR[ABC]4U266GHHF8G 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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Apacer Technology 78.CAGMR.40C0B 8GB
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内存RAM
Corsair CMY8GX3M2A2666C10 4GB
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内存RAM
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内存RAM
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
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内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
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内存RAM
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Kingston 99U5474-037.A00LF 4GB
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内存RAM
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SK Hynix HYMP112U64CP8-S6 1GB
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Shenzen Recadata Storage Technology 8GB
内存RAM
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Kingston ACR16D3LS1NGG/4G 4GB
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Crucial Technology CT16G4SFS832A.M8FB 16GB
内存RAM