Kingston ACR512X64D3S13C9G 4GB vs Panram International Corporation D4U2666P-8G 8GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Panram International Corporation D4U2666P-8G 8GB

Panram International Corporation D4U2666P-8G 8GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

更快的写入速度，GB/s

8.5 7.6

测试中的平均数值

Panram International Corporation D4U2666P-8G 8GB

需要考虑的原因
Panram International Corporation D4U2666P-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 27

左右 -29% 更低的延时
更快的读取速度，GB/s

16.2 11.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Panram International Corporation D4U2666P-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 21
读取速度，GB/s

11.5 16.2
写入速度，GB/s

8.5 7.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1756 2337

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMR32GX4M4C3200C16 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Panram International Corporation D4U2666P-8G 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Kingmax Semiconductor GSLG42F-18---------- 8GB

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G Skill Intl F4-3000C15-8GTZB 8GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Micron Technology 8ATF1G64HZ-2G3B2 8GB

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AMD R538G1601U2S-UO 8GB

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Kingston KCDT82-MIE 4GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

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SK Hynix HMA82GS6JJR8N-VK 16GB

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Crucial Technology CT8G4SFS8213.C8FAD1 8GB

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Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Kingston KMKYF9-MID 8GB

Kingston KMKYF9-MID 8GB