Kingston ACR512X64D3S13C9G 4GB vs V-GEN D4H8GL32A8TS 8GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

V-GEN D4H8GL32A8TS 8GB

V-GEN D4H8GL32A8TS 8GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 40

左右 33% 更低的延时

V-GEN D4H8GL32A8TS 8GB

需要考虑的原因
V-GEN D4H8GL32A8TS 8GB

报告一个错误

更快的读取速度，GB/s

17.5 11.5

测试中的平均数值
更快的写入速度，GB/s

9.7 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

V-GEN D4H8GL32A8TS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 40
读取速度，GB/s

11.5 17.5
写入速度，GB/s

8.5 9.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1756 2462

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT351U6CFR8C-H9 4GB

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Corsair MK16GX4M2B3200C16 8GB

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Micron Technology 18ASF1G72PZ-2G1A2 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-3333C16-8GVK 8GB

G Skill Intl F4-3333C16-8GVK 8GB

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Kingston 99U5584-001.A00LF 4GB

G Skill Intl F4-3333C16-16GVR 16GB

G Skill Intl F4-3333C16-16GVR 16GB

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Kingston 9905403-156.A00LF 2GB

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Kingston 9905630-039.A00G 16GB

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AMD R5316G1609U2K 8GB

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A-DATA Technology AO1E34RCSV1-BD7S 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

Samsung M471A1G43DB0-0-B 8GB

Samsung M471A1G43DB0-0-B 8GB