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Kingston HP698651-154-MCN 8GB
Corsair CM4X8GD3000C16K4D 8GB

Kingston HP698651-154-MCN 8GB vs Corsair CM4X8GD3000C16K4D 8GB

总分
star star star star star
Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

总分
star star star star star
Corsair CM4X8GD3000C16K4D 8GB

Corsair CM4X8GD3000C16K4D 8GB

差异 规格 评论

差异

Kingston HP698651-154-MCN 8GB 需要考虑的原因
Kingston HP698651-154-MCN 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 30
    左右 13% 更低的延时
Corsair CM4X8GD3000C16K4D 8GB 需要考虑的原因
Corsair CM4X8GD3000C16K4D 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.1 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 6.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston HP698651-154-MCN 8GB
Corsair CM4X8GD3000C16K4D 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 30
  • 读取速度，GB/s
    11.8 left arrow 17.1
  • 写入速度，GB/s
    6.4 left arrow 13.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2003 left arrow 3221

Kingston HP698651-154-MCN 8GB RAM的比较

SK Hynix HMT41GU6BFR8A-PB 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB

Corsair CM4X8GD3000C16K4D 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston KHX1600C9D3/8G 8GB
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内存RAM
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内存RAM
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内存RAM
A-DATA Technology DDR3 1600 4GB
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内存RAM
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内存RAM
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Kingston 99U5474-023.A00LF 4GB
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Apacer Technology 78.C1GMM.AUW0C 8GB
内存RAM
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Team Group Inc. Vulcan-1600 4GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
内存RAM
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Samsung M471B5673FH0-CF8 2GB
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Corsair CMD16GX4M2B3866C18 8GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
内存RAM
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Transcend Information TS2GSH64V6B 16GB
Transcend Information TS2GSH64V6B 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C15-8GVR 8GB
G Skill Intl F4-2666C15-8GVR 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
内存RAM