Nanya Technology M2F4G64CB8HB9N-CG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

总分

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

差异规格评论

差异

Nanya Technology M2F4G64CB8HB9N-CG 4GB

需要考虑的原因
Nanya Technology M2F4G64CB8HB9N-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 40

左右 40% 更低的延时
更快的读取速度，GB/s

13.2 9.1

测试中的平均数值
更快的写入速度，GB/s

8.8 6.9

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 40
读取速度，GB/s

13.2 9.1
写入速度，GB/s

8.8 6.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2301 2031

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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