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Kingston HP698651-154-MCN 8GB
G Skill Intl F4-4133C19-8GTZSWC 8GB

Kingston HP698651-154-MCN 8GB vs G Skill Intl F4-4133C19-8GTZSWC 8GB

总分
star star star star star
Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

总分
star star star star star
G Skill Intl F4-4133C19-8GTZSWC 8GB

G Skill Intl F4-4133C19-8GTZSWC 8GB

差异 规格 评论

差异

Kingston HP698651-154-MCN 8GB 需要考虑的原因
Kingston HP698651-154-MCN 8GB
报告一个错误
G Skill Intl F4-4133C19-8GTZSWC 8GB 需要考虑的原因
G Skill Intl F4-4133C19-8GTZSWC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 26
    左右 -18% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 6.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston HP698651-154-MCN 8GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 22
  • 读取速度，GB/s
    11.8 left arrow 17.5
  • 写入速度，GB/s
    6.4 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2003 left arrow 3288

Kingston HP698651-154-MCN 8GB RAM的比较

SK Hynix HMT41GU6BFR8A-PB 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB

G Skill Intl F4-4133C19-8GTZSWC 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F3-1600C11-8GISL 8GB
G Skill Intl F3-1600C11-8GISL 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A2K43DB1-CTD 16GB
Samsung M471A2K43DB1-CTD 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK64GX4M2A2400C16 32GB
Corsair CMK64GX4M2A2400C16 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Team Group Inc. TEAMGROUP-D4-3866 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung 9905599-020.A00G 16GB
Samsung 9905599-020.A00G 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Corsair CMU16GX4M2D3200C16 8GB
Corsair CMU16GX4M2D3200C16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C19-8GTZ 8GB
G Skill Intl F4-4000C19-8GTZ 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Team Group Inc. DDR4 2800 8GB
Team Group Inc. DDR4 2800 8GB
内存RAM