Kingston HP698651-154-MCN 8GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

总分

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

总分

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

差异规格评论

差异

Kingston HP698651-154-MCN 8GB

需要考虑的原因
Kingston HP698651-154-MCN 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时

Micron Technology 4ATF51264AZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB

报告一个错误

更快的读取速度，GB/s

15.6 11.8

测试中的平均数值
更快的写入速度，GB/s

11.2 6.4

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston HP698651-154-MCN 8GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

11.8 15.6
写入速度，GB/s

6.4 11.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2003 2468

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK128GX4M4A2666C16 32GB

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Panram International Corporation PUD42133C154G2VS 4GB

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SK Hynix DDR2 800 2G 2GB

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G Skill Intl F4-3400C16-8GTZ 8GB

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Nanya Technology M2X4G64CB8HG5N-DG 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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