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Nanya Technology M2X4G64CB8HG5N-DG 4GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB vs Crucial Technology BLS8G4S240FSDK.8FD 8GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

总分
star star star star star
Crucial Technology BLS8G4S240FSDK.8FD 8GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG5N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG5N-DG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 50
    左右 22% 更低的延时
  • 更快的读取速度，GB/s
    13.7 left arrow 13.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.7 left arrow 8.5
    测试中的平均数值
Crucial Technology BLS8G4S240FSDK.8FD 8GB 需要考虑的原因
Crucial Technology BLS8G4S240FSDK.8FD 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 50
  • 读取速度，GB/s
    13.7 left arrow 13.5
  • 写入速度，GB/s
    9.7 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2431 left arrow 2424

Nanya Technology M2X4G64CB8HG5N-DG 4GB RAM的比较

Samsung M378B5673EH1-CF8 2GB
AMD R538G1601U2S 8GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
Nanya Technology M2X4G64CB8HG5N-DG 4GB
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内存RAM
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内存RAM
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内存RAM
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