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Kingston HX318C10FK/4 4GB
Corsair CMK4GX4M1D2400C14 4GB

Kingston HX318C10FK/4 4GB vs Corsair CMK4GX4M1D2400C14 4GB

总分
star star star star star
Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

总分
star star star star star
Corsair CMK4GX4M1D2400C14 4GB

Corsair CMK4GX4M1D2400C14 4GB

差异 规格 评论

差异

Kingston HX318C10FK/4 4GB 需要考虑的原因
Kingston HX318C10FK/4 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    69 left arrow 72
    左右 4% 更低的延时
Corsair CMK4GX4M1D2400C14 4GB 需要考虑的原因
Corsair CMK4GX4M1D2400C14 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.4 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 4.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
Kingston HX318C10FK/4 4GB
Corsair CMK4GX4M1D2400C14 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 72
  • 读取速度，GB/s
    6.1 left arrow 15.4
  • 写入速度，GB/s
    4.1 left arrow 7.8
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1116 left arrow 1682

Kingston HX318C10FK/4 4GB RAM的比较

Samsung M378B5173BH0-CH9 4GB
Kingston KHX1866C10D3/4G 4GB

Corsair CMK4GX4M1D2400C14 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Corsair CMK4GX4M1D2400C14 4GB
Corsair CMK4GX4M1D2400C14 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905598-009.A00G 8GB
Kingston 9905598-009.A00G 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Apacer Technology 78.CAGNK.4040B 8GB
Apacer Technology 78.CAGNK.4040B 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMWX8GD3000C16W4D 8GB
Corsair CMWX8GD3000C16W4D 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-3000C16-8GTRG 8GB
G Skill Intl F4-3000C16-8GTRG 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-4000C19-16GTZKK 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK8GX4M2B3733C17 4GB
Corsair CMK8GX4M2B3733C17 4GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMR32GX4M4D3000C16 8GB
Corsair CMR32GX4M4D3000C16 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-2400C15-4GRK 4GB
G Skill Intl F4-2400C15-4GRK 4GB
内存RAM