Samsung M3 78T3354BZ0-CCC 256MB vs Corsair CMWX8GD3000C16W4D 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Corsair CMWX8GD3000C16W4D 8GB

Corsair CMWX8GD3000C16W4D 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 16.2

测试中的平均数值

Corsair CMWX8GD3000C16W4D 8GB

需要考虑的原因
Corsair CMWX8GD3000C16W4D 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 46

左右 -48% 更低的延时
更快的写入速度，GB/s

13.0 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMWX8GD3000C16W4D 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 31
读取速度，GB/s

2,909.8 16.2
写入速度，GB/s

1,519.2 13.0
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 3215

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT25664AA800.M16FM 2GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Crucial Technology CT8G4SFRA266.C4FE 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

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Crucial Technology CT51264BA1339.C16F 4GB

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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PUSKILL DDR3 1600 8G 8GB

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Kingston 9905403-134.A00LF 2GB

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Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB