Kingston HX318C10FK/4 4GB vs Kingston 9965600-027.A01G 16GB

总分

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

总分

Kingston 9965600-027.A01G 16GB

Kingston 9965600-027.A01G 16GB

差异规格评论

差异

Kingston HX318C10FK/4 4GB

需要考虑的原因
Kingston HX318C10FK/4 4GB

报告一个错误

Kingston 9965600-027.A01G 16GB

需要考虑的原因
Kingston 9965600-027.A01G 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 69

左右 -103% 更低的延时
更快的读取速度，GB/s

10.8 6.1

测试中的平均数值
更快的写入速度，GB/s

8.5 4.1

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Kingston HX318C10FK/4 4GB

Kingston 9965600-027.A01G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

69 34
读取速度，GB/s

6.1 10.8
写入速度，GB/s

4.1 8.5
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1116 2364

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFRA266.M8FRS 8GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Corsair CMK32GX4M2D3600C16 16GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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G Skill Intl F4-3000C15-8GVRB 8GB

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Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

Avexir Technologies Corporation DDR3-1600 CL10 8GB

Avexir Technologies Corporation DDR3-1600 CL10 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB

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Samsung M471B5173QH0-YK0 4GB

Kingston 9965669-025.A00G 8GB

Kingston 9965669-025.A00G 8GB