Samsung M391B5673FH0-CH9 2GB vs Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

总分

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

差异规格评论

差异

Samsung M391B5673FH0-CH9 2GB

需要考虑的原因
Samsung M391B5673FH0-CH9 2GB

报告一个错误

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 28

左右 -17% 更低的延时
更快的读取速度，GB/s

15.3 13.3

测试中的平均数值
更快的写入速度，GB/s

11.5 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673FH0-CH9 2GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 24
读取速度，GB/s

13.3 15.3
写入速度，GB/s

8.5 11.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2213 2744

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix HYMP112U64CP8-S5 1GB

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Micron Technology 4ATF51264HZ-3G2J1 4GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Samsung M393B5270CH0-CH9 4GB

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G Skill Intl F4-4800C19-8GTZRC 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CMR32GX4M4D3200C16 8GB

Corsair CMR32GX4M4D3200C16 8GB

Kingston 99U5584-005.A00LF 4GB

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Corsair CMD16GX4M4C3200C15 4GB

Corsair CMD16GX4M4C3200C15 4GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Apacer Technology 78.B1GQB.4010B 4GB

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Strontium EVMT8G1600U86S 8GB

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Avant Technology W641GU67J5213N8 8GB

Avant Technology W641GU67J5213N8 8GB