RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

Samsung M391B5673FH0-CH9 2GB vs Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

总分
star star star star star
Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

差异 规格 评论

差异

Samsung M391B5673FH0-CH9 2GB 需要考虑的原因
Samsung M391B5673FH0-CH9 2GB
报告一个错误
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 28
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    15.3 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 24
  • 读取速度，GB/s
    13.3 left arrow 15.3
  • 写入速度，GB/s
    8.5 left arrow 11.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2213 left arrow 2744

Samsung M391B5673FH0-CH9 2GB RAM的比较

Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-4000C15-8GVK 8GB
G Skill Intl F4-4000C15-8GVK 8GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMR128GX4M8C3000C16 16GB
Corsair CMR128GX4M8C3000C16 16GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Corsair CMU32GX4M4C3000C15 8GB
Corsair CMU32GX4M4C3000C15 8GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
G Skill Intl F4-3200C16-16GTZA 16GB
G Skill Intl F4-3200C16-16GTZA 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G6672 2GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
G Skill Intl F4-3733C17-8GTZKW 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Apacer Technology 78.CAGN7.4000C 8GB
Apacer Technology 78.CAGN7.4000C 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMK64GX4M4A2400C14 16GB
Corsair CMK64GX4M4A2400C14 16GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Samsung M393A2G40EB1-CPB 16GB
Samsung M393A2G40EB1-CPB 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4400C16-8GTZR 8GB
G Skill Intl F4-4400C16-8GTZR 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMR64GX4M4A2666C16 16GB
Corsair CMR64GX4M4A2666C16 16GB
内存RAM