SK Hynix HYMP112U64CP8-S5 1GB vs Micron Technology 4ATF51264HZ-3G2J1 4GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 15.7

测试中的平均数值
更快的写入速度，GB/s

2,978.2 12.4

测试中的平均数值

Micron Technology 4ATF51264HZ-3G2J1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-3G2J1 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 66

左右 -57% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 42
读取速度，GB/s

2,929.1 15.7
写入速度，GB/s

2,978.2 12.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

511 2352

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire CL16-16-16 D4-3000 4GB

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Kingston 99U5428-063.A00LF 8GB

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Kingston MSI24D4S7D8MH-16 16GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

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Panram International Corporation PUD43000C168G2NJR 8GB

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Samsung M393A1G40DB0-CPB 8GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

SpecTek Incorporated ?????????????????? 2GB

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Corsair CMK16GX4M4A2133C13 4GB

Corsair CMK16GX4M4A2133C13 4GB

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Samsung M471B5273EB0-CK0 4GB

Kingston 9965667-001.A00G 16GB

Kingston 9965667-001.A00G 16GB