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Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-4800C19-8GTZRC 8GB

Samsung M393B5270CH0-CH9 4GB vs G Skill Intl F4-4800C19-8GTZRC 8GB

总分
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分
star star star star star
G Skill Intl F4-4800C19-8GTZRC 8GB

G Skill Intl F4-4800C19-8GTZRC 8GB

差异 规格 评论

差异

Samsung M393B5270CH0-CH9 4GB 需要考虑的原因
Samsung M393B5270CH0-CH9 4GB
报告一个错误
G Skill Intl F4-4800C19-8GTZRC 8GB 需要考虑的原因
G Skill Intl F4-4800C19-8GTZRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 42
    左右 -56% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-4800C19-8GTZRC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 27
  • 读取速度，GB/s
    10.6 left arrow 18.0
  • 写入速度，GB/s
    9.0 left arrow 15.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 3419

Samsung M393B5270CH0-CH9 4GB RAM的比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB

G Skill Intl F4-4800C19-8GTZRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C16-8GVKB 8GB
G Skill Intl F4-3200C16-8GVKB 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF2666C15S4/16G 16GB
Kingston KF2666C15S4/16G 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-4800C19-8GTZRC 8GB
G Skill Intl F4-4800C19-8GTZRC 8GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F4-3200C14-8GTZKO 8GB
G Skill Intl F4-3200C14-8GTZKO 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M386A4G40DM0-CPB 32GB
Samsung M386A4G40DM0-CPB 32GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation R748G2133U2S 8GB
Panram International Corporation R748G2133U2S 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMK16GX4M2K4266C19 8GB
Corsair CMK16GX4M2K4266C19 8GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Corsair CM4X16GC3200C16K2E 16GB
Corsair CM4X16GC3200C16K2E 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
A-DATA Technology AM1P26KCST2-BABS 16GB
A-DATA Technology AM1P26KCST2-BABS 16GB
内存RAM
Samsung M4 70T5663QZ3-CE6 2GB
Samsung M4 70T5663QZ3-CE6 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
内存RAM