Samsung M4 70T5663QZ3-CE6 2GB vs Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

总分

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB

报告一个错误

低于PassMark测试中的延时，ns

68 86

左右 21% 更低的延时
更快的读取速度，GB/s

3 14.3

测试中的平均数值

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

需要考虑的原因
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

报告一个错误

更快的写入速度，GB/s

8.1 1,702.6

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CE6 2GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 86
读取速度，GB/s

3,886.6 14.3
写入速度，GB/s

1,702.6 8.1
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

654 1658

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Micron Technology 4ATF51264HZ-2G3B1 4GB

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Corsair CMD16GX4M2B3866C18 8GB

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Team Group Inc. TEAMGROUP-UD4-4500 8GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

Samsung M378A1G43DB0-CPB 8GB

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Crucial Technology BLS8G4D240FSE.M16FAD 8GB

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Kingston 9905471-006.A01LF 4GB

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V-Color Technology Inc. TL48G26S8KRRGB16 8GB

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A-DATA Technology DQKD1A08 1GB

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Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB