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Kingston HX318C10FK/4 4GB
Kingston K821PJ-MID 16GB

Kingston HX318C10FK/4 4GB vs Kingston K821PJ-MID 16GB

总分
star star star star star
Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

总分
star star star star star
Kingston K821PJ-MID 16GB

Kingston K821PJ-MID 16GB

差异 规格 评论

差异

Kingston HX318C10FK/4 4GB 需要考虑的原因
Kingston HX318C10FK/4 4GB
报告一个错误
Kingston K821PJ-MID 16GB 需要考虑的原因
Kingston K821PJ-MID 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 69
    左右 -68% 更低的延时
  • 更快的读取速度，GB/s
    12.7 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.3 left arrow 4.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 14900
    左右 1.29 更高的带宽

规格

完整的技术规格清单
Kingston HX318C10FK/4 4GB
Kingston K821PJ-MID 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 41
  • 读取速度，GB/s
    6.1 left arrow 12.7
  • 写入速度，GB/s
    4.1 left arrow 10.3
  • 内存带宽，mbps
    14900 left arrow 19200
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1116 left arrow 2338

Kingston HX318C10FK/4 4GB RAM的比较

Samsung M378B5173BH0-CH9 4GB
Kingston KHX1866C10D3/4G 4GB

Kingston K821PJ-MID 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Avant Technology J641GU42J7240ND 8GB
Avant Technology J641GU42J7240ND 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMWX8GD3000C15W4 8GB
Corsair CMWX8GD3000C15W4 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965643-002.A01G 4GB
Kingston 9965643-002.A01G 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
内存RAM
Kingston 9905403-170.A00LF 2GB
Kingston 9905403-170.A00LF 2GB
Micron Technology 16GB 2133MHz DIMM 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Transcend Information JM1600KLH-8G 8GB
Transcend Information JM1600KLH-8G 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMD64GX4M8X3800C19 8GB
Corsair CMD64GX4M8X3800C19 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation D4N2400PS-8G 8GB
Panram International Corporation D4N2400PS-8G 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
JUHOR JHD3000U1908JG 8GB
JUHOR JHD3000U1908JG 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Corsair CMR16GX4M2F4000C19 8GB
Corsair CMR16GX4M2F4000C19 8GB
内存RAM