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Kingston HX318C10FK/4 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB

Kingston HX318C10FK/4 4GB vs Micron Technology 16ATF2G64AZ-2G3B1 16GB

总分
star star star star star
Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

差异 规格 评论

差异

Kingston HX318C10FK/4 4GB 需要考虑的原因
Kingston HX318C10FK/4 4GB
报告一个错误
Micron Technology 16ATF2G64AZ-2G3B1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 69
    左右 -97% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 4.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 14900
    左右 1.29 更高的带宽

规格

完整的技术规格清单
Kingston HX318C10FK/4 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 35
  • 读取速度，GB/s
    6.1 left arrow 15.0
  • 写入速度，GB/s
    4.1 left arrow 10.4
  • 内存带宽，mbps
    14900 left arrow 19200
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1116 left arrow 2672

Kingston HX318C10FK/4 4GB RAM的比较

Samsung M378B5173BH0-CH9 4GB
Kingston KHX1866C10D3/4G 4GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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