Kingston HX318C10FK/4 4GB vs Micron Technology 9ASF51272AZ-2G3B1 4GB

总分

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

总分

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

差异规格评论

差异

Kingston HX318C10FK/4 4GB

需要考虑的原因
Kingston HX318C10FK/4 4GB

报告一个错误

Micron Technology 9ASF51272AZ-2G3B1 4GB

需要考虑的原因
Micron Technology 9ASF51272AZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 69

左右 -138% 更低的延时
更快的读取速度，GB/s

15.4 6.1

测试中的平均数值
更快的写入速度，GB/s

13.0 4.1

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

Kingston HX318C10FK/4 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

69 29
读取速度，GB/s

6.1 15.4
写入速度，GB/s

4.1 13.0
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1116 2854

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston HX318C10FK/4 4GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Avant Technology W641GU42J9266NB 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA81GU6DJR8N-WM 8GB

SK Hynix HMA81GU6DJR8N-WM 8GB

Kingston 99U5471-030.A00LF 8GB

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Crucial Technology CT102464BD160B.M16 8GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB