Samsung 1600 CL10 Series 8GB vs Crucial Technology CT16G4SFRA32A.C8FE 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 39

左右 36% 更低的延时
更快的读取速度，GB/s

16.1 15.7

测试中的平均数值

Crucial Technology CT16G4SFRA32A.C8FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFRA32A.C8FE 16GB

报告一个错误

更快的写入速度，GB/s

12.0 10.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 39
读取速度，GB/s

16.1 15.7
写入速度，GB/s

10.1 12.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2764 2958

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Asgard VMA45UG-MIC1U22T2 8GB

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Patriot Memory (PDP Systems) 3600 C16 Series 8GB

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Samsung M378B5773DH0-CH9 2GB

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Kingston 9965600-012.A02G 16GB

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Corsair CMK128GX4M4E3200C16 32GB

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Kingston 9905403-515.A00LF 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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Samsung M393A2G40EB1-CPB 16GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Crucial Technology CT8G4DFRA266.C8FJ 8GB

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Corsair CML8GX3M2A1600C9 4GB

Essencore Limited KD48GS88C-32N2200 8GB

Essencore Limited KD48GS88C-32N2200 8GB