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Kingston HX318C10FK/4 4GB
Mushkin MR[A/B]4U280HHHH8G 8GB

Kingston HX318C10FK/4 4GB vs Mushkin MR[A/B]4U280HHHH8G 8GB

总分
star star star star star
Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

总分
star star star star star
Mushkin MR[A/B]4U280HHHH8G 8GB

Mushkin MR[A/B]4U280HHHH8G 8GB

差异 规格 评论

差异

Kingston HX318C10FK/4 4GB 需要考虑的原因
Kingston HX318C10FK/4 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    69 left arrow 72
    左右 4% 更低的延时
Mushkin MR[A/B]4U280HHHH8G 8GB 需要考虑的原因
Mushkin MR[A/B]4U280HHHH8G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.6 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 4.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
Kingston HX318C10FK/4 4GB
Mushkin MR[A/B]4U280HHHH8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 72
  • 读取速度，GB/s
    6.1 left arrow 14.6
  • 写入速度，GB/s
    4.1 left arrow 8.5
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1116 left arrow 1918

Kingston HX318C10FK/4 4GB RAM的比较

Samsung M378B5173BH0-CH9 4GB
Kingston KHX1866C10D3/4G 4GB

Mushkin MR[A/B]4U280HHHH8G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Smart Modular SH564128FH8NZQNSCG 4GB
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内存RAM
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
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G Skill Intl F3-10600CL9-2GBNT 2GB
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内存RAM
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Samsung M4 70T5663CZ3-CE6 2GB
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SK Hynix HMA84GR7JJR4N-VK 32GB
内存RAM
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Samsung M378B5673EH1-CF8 2GB
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内存RAM
Corsair CMY16GX3M4A2133C8 4GB
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内存RAM
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Kingston 9905599-029.A00G 4GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
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内存RAM