Kingston K1N7HK-ELC 2GB vs Kingston 9905701-029.A00G 16GB

总分

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

总分

Kingston 9905701-029.A00G 16GB

Kingston 9905701-029.A00G 16GB

差异规格评论

差异

Kingston K1N7HK-ELC 2GB

需要考虑的原因
Kingston K1N7HK-ELC 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 41

左右 37% 更低的延时

Kingston 9905701-029.A00G 16GB

需要考虑的原因
Kingston 9905701-029.A00G 16GB

报告一个错误

更快的读取速度，GB/s

14.7 12.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston K1N7HK-ELC 2GB

Kingston 9905701-029.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 41
读取速度，GB/s

12.6 14.7
写入速度，GB/s

7.7 7.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1820 2186

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

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Kingston K1N7HK-ELC 2GB

Kingston 9905701-029.A00G 16GB

Kingston 9905701-029.A00G 16GB

Samsung M393B2G70BH0-CK0 16GB

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Corsair CMWX8GF2933Z19W8 8GB

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Crucial Technology CT51264BA1339.D16F 4GB

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Smart Modular SMS4TDC3C0K0446SCG 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Kingston KHX2400C15/8G 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

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Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Corsair CMU32GX4M4A2666C16 8GB

Corsair CMU32GX4M4A2666C16 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology BLE4G4D26AFEA.8FADG 4GB

Crucial Technology BLE4G4D26AFEA.8FADG 4GB