Samsung M393B2G70BH0-CK0 16GB vs Corsair CMWX8GF2933Z19W8 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Corsair CMWX8GF2933Z19W8 8GB

Corsair CMWX8GF2933Z19W8 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Corsair CMWX8GF2933Z19W8 8GB

需要考虑的原因
Corsair CMWX8GF2933Z19W8 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 54

左右 -93% 更低的延时
更快的读取速度，GB/s

18.6 9.2

测试中的平均数值
更快的写入速度，GB/s

14.4 8.1

测试中的平均数值
更高的内存带宽，mbps

23400 12800

左右 1.83 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Corsair CMWX8GF2933Z19W8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 28
读取速度，GB/s

9.2 18.6
写入速度，GB/s

8.1 14.4
内存带宽，mbps

12800 23400

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-23400, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2105 3491

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Kingston 9905403-447.A00LF 4GB

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Crucial Technology BLS4G4D240FSE.8FAR 4GB

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Crucial Technology CT16G4SFD824A.C16FBR 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston X74R9W-MIE 8GB

Kingston X74R9W-MIE 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Mushkin 99[2/7/4]205F 8GB

Mushkin 99[2/7/4]205F 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Kingston MSI24D4S7D8MB-8 8GB

Kingston MSI24D4S7D8MB-8 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BL8G24C16U4B.8FD 8GB

Crucial Technology BL8G24C16U4B.8FD 8GB