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Kingston K531R8-MIN 4GB
Corsair CMU16GX4M2D3200C16 8GB

Kingston K531R8-MIN 4GB vs Corsair CMU16GX4M2D3200C16 8GB

总分
star star star star star
Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分
star star star star star
Corsair CMU16GX4M2D3200C16 8GB

Corsair CMU16GX4M2D3200C16 8GB

差异 规格 评论

差异

Kingston K531R8-MIN 4GB 需要考虑的原因
Kingston K531R8-MIN 4GB
报告一个错误
Corsair CMU16GX4M2D3200C16 8GB 需要考虑的原因
Corsair CMU16GX4M2D3200C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 28
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston K531R8-MIN 4GB
Corsair CMU16GX4M2D3200C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 22
  • 读取速度，GB/s
    13.4 left arrow 17.6
  • 写入速度，GB/s
    9.0 left arrow 13.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 3060

Kingston K531R8-MIN 4GB RAM的比较

Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Corsair CMU16GX4M2D3200C16 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Corsair CMU16GX4M2D3200C16 8GB
Corsair CMU16GX4M2D3200C16 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Mushkin MR[A/B]4U360JNNM8G 8GB
Mushkin MR[A/B]4U360JNNM8G 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMK16GX4M1B3000C15 16GB
Corsair CMK16GX4M1B3000C15 16GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston 9905599-025.A00G 8GB
Kingston 9905599-025.A00G 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Kllisre 99P54280002.A00LF 8GB
Kllisre 99P54280002.A00LF 8GB
内存RAM
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Samsung M393A1K43BB0-CRC 8GB
Samsung M393A1K43BB0-CRC 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston KHX3200C18D4/4G 4GB
Kingston KHX3200C18D4/4G 4GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Essencore Limited KD48GU881-26N190A 8GB
Essencore Limited KD48GU881-26N190A 8GB
内存RAM
Kingston KN2M64-ETB 8GB
Kingston KN2M64-ETB 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
内存RAM