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Kingston K531R8-MIN 4GB
Heoriady HX2666DT8G-TD 8GB

Kingston K531R8-MIN 4GB vs Heoriady HX2666DT8G-TD 8GB

总分
star star star star star
Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分
star star star star star
Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB

差异 规格 评论

差异

Kingston K531R8-MIN 4GB 需要考虑的原因
Kingston K531R8-MIN 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 39
    左右 28% 更低的延时
Heoriady HX2666DT8G-TD 8GB 需要考虑的原因
Heoriady HX2666DT8G-TD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.6 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston K531R8-MIN 4GB
Heoriady HX2666DT8G-TD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 39
  • 读取速度，GB/s
    13.4 left arrow 14.6
  • 写入速度，GB/s
    9.0 left arrow 10.1
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 2513

Kingston K531R8-MIN 4GB RAM的比较

Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Heoriady HX2666DT8G-TD 8GB RAM的比较

Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Heoriady HX2666DT8G-TD 8GB
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Patriot Memory (PDP Systems) PSD38G16002 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Crucial Technology CT51264BA1339.C16F 4GB
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内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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内存RAM
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Kingston KP223C-ELD 2GB
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Corsair CMT16GX4M2Z3200C16 8GB
内存RAM