Kingston K531R8-MIN 4GB vs Kingston 16ATF2G64AZ-2G1B1 8GB

总分

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分

Kingston 16ATF2G64AZ-2G1B1 8GB

Kingston 16ATF2G64AZ-2G1B1 8GB

差异规格评论

差异

Kingston K531R8-MIN 4GB

需要考虑的原因
Kingston K531R8-MIN 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 67

左右 58% 更低的延时

Kingston 16ATF2G64AZ-2G1B1 8GB

需要考虑的原因
Kingston 16ATF2G64AZ-2G1B1 8GB

报告一个错误

更快的读取速度，GB/s

17.1 13.4

测试中的平均数值
更快的写入速度，GB/s

9.1 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston K531R8-MIN 4GB

Kingston 16ATF2G64AZ-2G1B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 67
读取速度，GB/s

13.4 17.1
写入速度，GB/s

9.0 9.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2445 2027

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16U4BL.M8FE 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Crucial Technology CT16G4SFD8266.M16FE 16GB

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Samsung M393B2G70BH0-CK0 16GB

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Corsair CMD16GX4M4B3333C16 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Kingston 99U5474-038.A00LF 4GB

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Apacer Technology 78.BAGN8.AZC0B 4GB

Apacer Technology 78.BAGN8.AZC0B 4GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Micron Technology 16ATF2G64HZ-2G6E3 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

Crucial Technology CT16G4DFS8266.C8FB 16GB