Kingston K531R8-MIN 4GB vs Micron Technology 16ATF2G64HZ-2G6J1 16GB

总分

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

差异规格评论

差异

Kingston K531R8-MIN 4GB

需要考虑的原因
Kingston K531R8-MIN 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 26% 更低的延时

Micron Technology 16ATF2G64HZ-2G6J1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6J1 16GB

报告一个错误

更快的读取速度，GB/s

15.2 13.4

测试中的平均数值
更快的写入速度，GB/s

11.4 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston K531R8-MIN 4GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 38
读取速度，GB/s

13.4 15.2
写入速度，GB/s

9.0 11.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2445 2821

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Crucial Technology BLS16G4S240FSD.16FBD 16GB

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NSITEXE Inc Visenta 16GB

NSITEXE Inc Visenta 16GB

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SK Hynix HYMP125S64CP8-S6 2GB

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G Skill Intl F4-3000C16-8GSXWB 8GB

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Samsung M391B5673EH1-CH9 2GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

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Samsung M471B1G73DB0-YK0 8GB

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Samsung M378B1G73DB0-CK0 8GB

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Kingston 99U5403-465.A00LF 8GB

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Smart Modular SF464128CK8I6GKSEG 4GB