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Kingston K531R8-MIN 4GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB

Kingston K531R8-MIN 4GB vs Micron Technology 36ASF2G72PZ-2G1B1 16GB

总分
star star star star star
Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分
star star star star star
Micron Technology 36ASF2G72PZ-2G1B1 16GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

差异 规格 评论

差异

Kingston K531R8-MIN 4GB 需要考虑的原因
Kingston K531R8-MIN 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 51
    左右 45% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 9.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 8.1
    测试中的平均数值
Micron Technology 36ASF2G72PZ-2G1B1 16GB 需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1B1 16GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston K531R8-MIN 4GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 51
  • 读取速度，GB/s
    13.4 left arrow 9.9
  • 写入速度，GB/s
    9.0 left arrow 8.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 2314

Kingston K531R8-MIN 4GB RAM的比较

Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston K531R8-MIN 4GB
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