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Kingston K531R8-MIN 4GB
Transcend Information JM3200HLG-8G 8GB

Kingston K531R8-MIN 4GB vs Transcend Information JM3200HLG-8G 8GB

总分
star star star star star
Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分
star star star star star
Transcend Information JM3200HLG-8G 8GB

Transcend Information JM3200HLG-8G 8GB

差异 规格 评论

差异

Kingston K531R8-MIN 4GB 需要考虑的原因
Kingston K531R8-MIN 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 31
    左右 10% 更低的延时
Transcend Information JM3200HLG-8G 8GB 需要考虑的原因
Transcend Information JM3200HLG-8G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.4 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Kingston K531R8-MIN 4GB
Transcend Information JM3200HLG-8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 31
  • 读取速度，GB/s
    13.4 left arrow 17.4
  • 写入速度，GB/s
    9.0 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 3208

Kingston K531R8-MIN 4GB RAM的比较

Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Transcend Information JM3200HLG-8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Transcend Information JM3200HLG-8G 8GB
Transcend Information JM3200HLG-8G 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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SK Hynix DDR2 800 2G 2GB
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内存RAM
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内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
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内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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内存RAM
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Kingston 9905403-011.A03LF 2GB
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Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
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Lexar Co Limited LD4AU016G-H3200GST 16GB
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Kingston 9965600-033.A00G 16GB
内存RAM
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
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Golden Empire CL16-20-20 D4-3200 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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Samsung M378A1G43TB1-CTD 8GB
内存RAM
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G Skill Intl F3-14900CL8-4GBXM 4GB
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Crucial Technology CT16G4SFRA266.C8FE 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
内存RAM