Kingston KF552C40-16 16GB vs Chun Well Technology Holding Limited D4U0836181B 8GB

总分

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

总分

Chun Well Technology Holding Limited D4U0836181B 8GB

Chun Well Technology Holding Limited D4U0836181B 8GB

差异规格评论

差异

Kingston KF552C40-16 16GB

需要考虑的原因
Kingston KF552C40-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 32

左右 6% 更低的延时
更快的写入速度，GB/s

13.2 12.8

测试中的平均数值

Chun Well Technology Holding Limited D4U0836181B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0836181B 8GB

报告一个错误

更快的读取速度，GB/s

15.6 15.5

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Kingston KF552C40-16 16GB

Chun Well Technology Holding Limited D4U0836181B 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

30 32
读取速度，GB/s

15.5 15.6
写入速度，GB/s

13.2 12.8
内存带宽，mbps

19200 21300

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 PC4-21300, 1.2V, CAS Supported: 10 12 14 16 18 19 20
时序/时钟速度

no data / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3343 3279

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited D4U0836181B 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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G Skill Intl F4-3600C14-16GTZR 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4000C16-16GTRSA 16GB

G Skill Intl F4-4000C16-16GTRSA 16GB

Corsair CMY8GX3M2A2666C10 4GB

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Corsair CMSX16GX4M2A3000C18 8GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Ramaxel Technology RMUA5110KE68H9F-2400 4GB

Ramaxel Technology RMUA5110KE68H9F-2400 4GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

G Skill Intl F4-2133C15-4GVK 4GB

G Skill Intl F4-2133C15-4GVK 4GB