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Kingston KF552C40-16 16GB
Corsair CMT32GX4M4C3200C16 8GB

Kingston KF552C40-16 16GB vs Corsair CMT32GX4M4C3200C16 8GB

总分
star star star star star
Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

总分
star star star star star
Corsair CMT32GX4M4C3200C16 8GB

Corsair CMT32GX4M4C3200C16 8GB

差异 规格 评论

差异

Kingston KF552C40-16 16GB 需要考虑的原因
Kingston KF552C40-16 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Corsair CMT32GX4M4C3200C16 8GB 需要考虑的原因
Corsair CMT32GX4M4C3200C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 30
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 13.2
    测试中的平均数值

规格

完整的技术规格清单
Kingston KF552C40-16 16GB
Corsair CMT32GX4M4C3200C16 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 27
  • 读取速度，GB/s
    15.5 left arrow 18.1
  • 写入速度，GB/s
    13.2 left arrow 15.3
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    no data / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3343 left arrow 3733

Kingston KF552C40-16 16GB RAM的比较

Kingston KF560C40-16 16GB
G Skill Intl F4-3000C15-8GRK 8GB

Corsair CMT32GX4M4C3200C16 8GB RAM的比较

SK Hynix HMA851S6CJR6N-XN 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-2400C16-8GFT 8GB
G Skill Intl F4-2400C16-8GFT 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD32GX4M2A2666C15 16GB
Corsair CMD32GX4M2A2666C15 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Kingston KHX2666C15D4/4G 4GB
Kingston KHX2666C15D4/4G 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Golden Empire CL15-15-15 D4-2400 4GB
Golden Empire CL15-15-15 D4-2400 4GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Golden Empire CL18-20-20 D4-3200 8GB
Golden Empire CL18-20-20 D4-3200 8GB
内存RAM
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
G Skill Intl F4-4400C18-8GTRS 8GB
G Skill Intl F4-4400C18-8GTRS 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Maxsun MSD44G24Q3 4GB
Maxsun MSD44G24Q3 4GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Kingston KVR26N19D8/16 16GB
Kingston KVR26N19D8/16 16GB
内存RAM