Samsung M395T5160QZ4-CE66 2GB vs Crucial Technology CT16G4DFD824A.C16FJ 16GB

总分

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

差异规格评论

差异

Samsung M395T5160QZ4-CE66 2GB

需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB

报告一个错误

更快的读取速度，GB/s

2 15.7

测试中的平均数值
更快的写入速度，GB/s

2,072.7 11.2

测试中的平均数值

Crucial Technology CT16G4DFD824A.C16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4DFD824A.C16FJ 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 75

左右 -159% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M395T5160QZ4-CE66 2GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 29
读取速度，GB/s

2,730.3 15.7
写入速度，GB/s

2,072.7 11.2
内存带宽，mbps

5300 19200

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 2974

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Corsair CMK64GX4M8A2133C13 8GB

Corsair CMK64GX4M8A2133C13 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston 9905713-030.A00G 8GB

Kingston 9905713-030.A00G 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMK16GX4M2C3333C16 8GB

Corsair CMK16GX4M2C3333C16 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

A-DATA Technology AM2P24HC8T1-BUSS 8GB

A-DATA Technology AM2P24HC8T1-BUSS 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD48G26662 8GB

Patriot Memory (PDP Systems) PSD48G26662 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-3000C15-8GRK 8GB

G Skill Intl F4-3000C15-8GRK 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Kingston HP26D4S9S8MD-8 8GB

Kingston HP26D4S9S8MD-8 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

G Skill Intl F3-12800CL7-2GBRM 2GB

G Skill Intl F3-12800CL7-2GBRM 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology BL4G24C16U4B.8FB 4GB

Crucial Technology BL4G24C16U4B.8FB 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB