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Kingston KF552C40-16 16GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Kingston KF552C40-16 16GB vs Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

总分
star star star star star
Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

差异 规格 评论

差异

Kingston KF552C40-16 16GB 需要考虑的原因
Kingston KF552C40-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 71
    左右 58% 更低的延时
  • 更快的写入速度，GB/s
    13.2 left arrow 8.3
    测试中的平均数值
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
报告一个错误

规格

完整的技术规格清单
Kingston KF552C40-16 16GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 71
  • 读取速度，GB/s
    15.5 left arrow 15.5
  • 写入速度，GB/s
    13.2 left arrow 8.3
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3343 left arrow 1902

Kingston KF552C40-16 16GB RAM的比较

Kingston KF560C40-16 16GB
G Skill Intl F4-3000C15-8GRK 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
内存RAM
Samsung M378B5173EB0-YK0 4GB
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A-DATA Technology ADOVE1A0834E 1GB
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Crucial Technology BLS4G4S240FSD.8FAR 4GB
内存RAM
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内存RAM
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Crucial Technology BLS4G4D240FSA.M8F 4GB
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Corsair CMK32GX4M2C3200C18 16GB
内存RAM