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Kingston KF552C40-16 16GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
比较
Kingston KF552C40-16 16GB vs Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
总分
Kingston KF552C40-16 16GB
总分
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston KF552C40-16 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
86
左右 65% 更低的延时
更快的读取速度,GB/s
15.5
14.3
测试中的平均数值
更快的写入速度,GB/s
13.2
8.1
测试中的平均数值
需要考虑的原因
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Kingston KF552C40-16 16GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
主要特点
存储器类型
DDR5
DDR4
PassMark中的延时,ns
30
86
读取速度,GB/s
15.5
14.3
写入速度,GB/s
13.2
8.1
内存带宽,mbps
19200
21300
Other
描述
PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
no data / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
3343
1658
Kingston KF552C40-16 16GB RAM的比较
Kingston KF560C40-16 16GB
G Skill Intl F4-3000C15-8GRK 8GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB RAM的比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KF552C40-16 16GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA851U6DJR6N-XN 4GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMWX8GD3200C16W4 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Samsung M393B2G70BH0-CH9 16GB
Kingston 9965643-006.A01G 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Samsung M393B5270CH0-CH9 4GB
Kingston XWM8G1-MIE 32GB
TwinMOS 8DHE3MN8-HATP 2GB
Mushkin 99[2/7/4]209F 8GB
Swissbit MEU25664D6BC2EP-30 2GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Gloway International (HK) STK4U2400D15082C 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
报告一个错误
×
Bug description
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