Kingston KHX1600C9D3/4G 4GB vs Crucial Technology CT8G4DFS8266.M8FH 8GB

总分

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

总分

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

差异规格评论

差异

Kingston KHX1600C9D3/4G 4GB

需要考虑的原因
Kingston KHX1600C9D3/4G 4GB

报告一个错误

Crucial Technology CT8G4DFS8266.M8FH 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.M8FH 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 36

左右 -3% 更低的延时
更快的读取速度，GB/s

16.3 14.5

测试中的平均数值
更快的写入速度，GB/s

12.2 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/4G 4GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 35
读取速度，GB/s

14.5 16.3
写入速度，GB/s

9.7 12.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2465 2893

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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Kingston KHX1600C9D3/4G 4GB

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Crucial Technology CT8G4DFS8266.M8FH 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

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Essencore Limited IM44GU48N24-FFFHAB 4GB

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Kingston 9965433-034.A00LF 4GB

Mushkin 99[2/7/4]199F 8GB

Mushkin 99[2/7/4]199F 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston ACR32D4U2S1ME-8 8GB

Kingston ACR32D4U2S1ME-8 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

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Kingston 9905734-059.A00G 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology BLS8G4D240FSB.16FBD2 8GB

Crucial Technology BLS8G4D240FSB.16FBD2 8GB