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Kingston KHX1600C9D3/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Kingston KHX1600C9D3/4G 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

总分
star star star star star
Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

差异 规格 评论

差异

Kingston KHX1600C9D3/4G 4GB 需要考虑的原因
Kingston KHX1600C9D3/4G 4GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 36
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 14.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston KHX1600C9D3/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 28
  • 读取速度，GB/s
    14.5 left arrow 16.2
  • 写入速度，GB/s
    9.7 left arrow 12.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2465 left arrow 2417

Kingston KHX1600C9D3/4G 4GB RAM的比较

Kingston 99U5403-050.A00LF 4GB
Kingston KHX1600C10D3/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB RAM的比较

Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT51264BF160BJ.M8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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