Wilk Elektronik S.A. GR2666D464L19S/8G 8GB vs Samsung M323R2GA3BB0-CQKOD 16GB

总分

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

总分

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

差异规格评论

差异

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

报告一个错误

更快的读取速度，GB/s

14.7 13.4

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Samsung M323R2GA3BB0-CQKOD 16GB

需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 -32% 更低的延时
更快的写入速度，GB/s

12.1 10.2

测试中的平均数值

规格

完整的技术规格清单

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

Samsung M323R2GA3BB0-CQKOD 16GB

主要特点

存储器类型

DDR4 DDR5
PassMark中的延时，ns

33 25
读取速度，GB/s

14.7 13.4
写入速度，GB/s

10.2 12.1
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz no data / 2400 MHz
排名PassMark (越多越好)

2764 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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